NEL (NTT)***电流直调激光器, 典型10Gbps速率, 波长1550nm, PMF保偏尾纤输出功率>1.0mW , SMA射频母头; 蝶形封装, 内部带制冷, 支持城域和长途应用, 以及10G以太网.

10Gbps DML DFB Laser,NEL (NTT) NLK1551SSC, 1550nm, Direct Modulated Laser

The NEL NLK1551SSC directly-modulated laser (DML) is a cost-effective solution for 10 Gb/s digital transmission of up to 50 km using traditional intra-city fiber links. The package contains a high-speed DFB laser chip, thermoelectric cooler, thermistor, optical ***lator, and a rear-facet monitor photodiode for external optical power control.

Applications

• SONET/SDH low-cost metro applications

• High-speed data communications

• DWDM equipment drop-side applications

Features

• Direct-modulated 1550 nm laser module characterized for use in 10Gbps operations up to 40 km

• Average optical output power, 1mW min.

• SMA female RF connector

• Polarization maintaining fiber pigtail

• High relaxation frequency at low bias

• Temperature stabilized with internal thermoelectric cooler (TEC), enabling operation within a wide temperature range of –40 °C to +80 ° C

• Hermetically sealed optics, ***lator on TEC

Electrical/Optical Characteristics

Table 2. Electrical and Optical Characteristics (Case Temperature, –40 °C to + 80 °C; Laser Temperature, 25 °C unless otherwise noted.)

1. 10Gbps PRBS 223–1, ER=8.2dB, @ IOP, TOP=25°C, typical 50mAp–p drive Current.

2. Measurements made with 100μH in series with pin 3 (laser cathode).

Caution: Use of controls, adjustments, and procedures other than those specified herein may result in hazardous laser radiation exposure.

Absolute Maximum Ratings

Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability. RF input shall be ac coupled. It is recommended that a series inductor of 100 H be placed external to the device on Pin 3.