CYPRESS代理商 ，专业供应CYPRESS的车规FRAM，  CY15B102  , CY15B128Q ,CY15B064Q, CY15B004Q,CY15B256J

CY15B102Q 2-Mbit (256 K × 8) Serial (SPI) Automotive F-RAM Cypress Semiconductor Corporation ? 198 Champion Court ? San Jose, CA 95134-1709 ? 408-943-2600 Document Number: 001-89166 Rev. *F Revised April 20, 2017 2-Mbit (256 K × 8) Serial (SPI) Automotive F-RAM Features ■ 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 256 K × 8 ? High-endurance 10 trillion (1013) read/writes ? 121-year data retention (See the Data Retention and Endurance table) ? NoDelay? writes ? Advanced high-reliability ferroelectric process ■ Very fast serial peripheral interface (SPI) ? Up to 25 MHz frequency ? Direct hardware replacement for serial flash and EEPROM ? Supports SPI mode 0 (0, 0) and mode 3 (1, 1) ■ Sophisticated write protection scheme ? Hardware protection using the Write Protect (WP) pin ? Software protection using Write Disable instruction ? Software block protection for 1/4, 1/2, or entire array ■ Device ID ? Manufacturer ID and Product ID ■ Low power consumption ? 5 mA active current at 25 MHz ? 750 ?A standby current ? 20 ?A sleep mode current ■ Low-voltage operation: VDD = 2.0 V to 3.6 V ■ Automotive-E temperature: –40 ?C to +125 ?C ■ 8-pin small outline integrated circuit (SOIC) package ■ AEC Q100 Grade 1 compliant ■ Restriction of hazardous substances (RoHS) compliant Functional Overview The CY15B102Q is a 2-Mbit nonvolatile memory employing an advanced ferroelectric process. F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 121 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories. Unlike serial flash and EEPROM, the CY15B102Q performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other nonvolatile memories. The CY15B102Q is capable of supporting 1013 read/write cycles, or 10 million times more write cycles than EEPROM. These capabilities make the CY15B102Q ideal for nonvolatile memory applications requiring frequent or rapid writes. Examples range from data collection, where the number of write cycles may be critical, to demanding industrial controls where the long write time of serial flash or EEPROM can cause data loss. The CY15B102Q provides substantial benefits to users of serial EEPROM or flash as a hardware drop-in replacement. The CY15B102Q uses the high-speed SPI bus, which enhances the high-speed write capability of F-RAM technology. The device incorporates a read-only Device ID that allows the host to determine the manufacturer, product density, and product revision. The device specifications are guaranteed over an Automotive-E temperature range of –40 ?C to +125 ?

128-Kbit (16K × 8) Automotive Serial (I2C) F-RAM Cypress Semiconductor Corporation ? 198 Champion Court ? San Jose, CA 95134-1709 ? 408-943-2600 Document Number: 001-90872 Rev. *J Revised December 24, 2018 128-Kbit (16K × 8) Automotive Serial (I2C) F-RAM Features ■ 128-Kbit ferroelectric random access memory (F-RAM) logically organized as 16K × 8 ? High-endurance 100 trillion (1014) read/writes ? 151-year data retention (See Data Retention and Endurance on page 12) ? NoDelay? writes ? Advanced high-reliability ferroelectric process ■ Fast two-wire serial interface (I2C) ? Up to 3.4 MHz frequency[1] ? Direct hardware replacement for serial EEPROM ? Supports legacy timings for 100 kHz and 400 kHz ■ Device ID ? Manufacturer ID and Product ID ■ Low-power consumption ? 175 ?A active current at 100 kHz ? 150 ?A standby current ? 8 ?A sleep mode current ■ Low-voltage operation: VDD = 2.0 V to 3.6 V ■ Automotive-A temperature: –40 ?C to +85 ?C ■ 8-pin small outline integrated circuit (SOIC) package ■ Restriction of hazardous substances (RoHS) compliant Functional Description The CY15B128J is a 128-Kbit nonvolatile memory employing an advanced ferroelectric process. An F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other nonvolatile memories. Unlike EEPROM, the CY15B128J performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other nonvolatile memories. F-RAM also exhibits much lower power during writes than EEPROM because write operations do not require an internally elevated power supply voltage for write circuits. The CY15B128J is capable of supporting 1014 read/write cycles, or 100 million times more write cycles than EEPROM. These capabilities make the CY15B128J ideal for nonvolatile memory applications, requiring frequent or rapid writes. Examples range from data logging, where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss. The combination of features allows more frequent data writing with less overhead for the system. The CY15B128J provides substantial benefits to users of serial EEPROM as a hardware drop-in replacement. The device incorporates a read-only Device ID that allows the host to determine the manufacturer, product density, and product revision. The device specifications are guaranteed over an Automotive-A temperature range of –40 ?C to +85 ?C.

CYPRESS 车规FRAM 特性