ABB 5SHX2645L0004 可控硅模块

IGCT集成门极换流晶闸管(Intergrated Gate Commutated Thyristors)是一种中压变频器开发的用于巨型电力电子成套装置中的电力半导体开关器件(集成门极换流晶闸管=门极换流晶闸管+门极单元)。

1997年由ABB公司提出。IGCT使变流装置在功率、可靠性、开关速度、效率、成本、重量和体积等方面都取得了巨大进展，给电力电子成套装置带来了新的飞跃。

IGCT是将GTO芯片与反并联二极管和门极驱动电路集成在一起，再与其门极驱动器在外围以低电感方式连接，结合了晶体管的稳定关断能力和晶闸管低通态损耗的优点

在导通阶段发挥晶闸管的性能，关断阶段呈现晶体管的特性。IGCT 具有电流大、阻断电压高、开关频***、可靠性高、结构紧凑、低导通损耗等特点，而且造成本低，成品***，有很好的应用前景

己用于电力系统电网装置（100MVA）和的中功率工业驱动装置（5MW)IGCT在中压变频器领域内成功的应用了11年的时间（到09年为止)，由于IGCT的高速开关能力无需缓冲电路，因而所需的功率元件数目更少，

运行的可靠性大大增高。IGCT集 IGBT（绝缘门极双极性晶体管）的高速开关特性和GTO（门极关断品闸管）的高阻断电压和低导通损耗特性于一体，一般触发信号通过光纤传输到IGCT单元。

在ACS6000的有缘整流单元的相模块里，每相模块由IGCT 和二极管、钳位电容组成，由独立的门极供电单元GUSP为其提供能源。

IGCT Integrated Gate Commutated Thyristors are a type of power semiconductor switching device developed for medium voltage inverters and used in giant power electronic complete sets (Integrated Gate Commutated Thyristors=Gate Commutated Thyristors+Gate Units).

Proposed by ABB in 1997. IGCT has made significant progress in power, reliability, switching speed, efficiency, cost, weight, and volume of converter devices, bringing a new leap to power electronic complete sets of devices.

IGCT integrates GTO chips with anti parallel diodes and gate drive circuits, and then connects them with their gate drivers in a low inductance manner on the periphery, combining the advantages of stable turn-off capability of transistors and low on state losses of thyristors

In the conduction phase, the performance of thyristors is utilized, while in the off phase, the characteristics of transistors are presented. IGCT has the characteristics of high current, high blocking voltage, high switching frequency, high reliability, compact structure, low conduction loss, and low manufacturing cost, high yield, and has good application prospects

The IGCT, which has been used in power system grid devices (100MVA) and medium power industrial drive devices (5MW), has been successfully applied in the field of medium voltage frequency converters for 11 years (until 2009). Due to the high-speed switching ability of IGCT without the need for buffer circuits, the number of power components required is even smaller,

The reliability of operation has greatly increased. IGCT integrates the high-speed switching characteristics of IGBT (insulated gate bipolar transistor) and the high blocking voltage and low conduction loss characteristics of GTO (gate turn off thyristor). Generally, the trigger signal is transmitted to the IGCT unit through optical fiber.

In the phase module of the edge rectifier unit of ACS6000, each phase module is composed of IGCT, diode, and clamp capacitor, and is powered by an independent gate power supply unit GUSP.