MT11G035B= 100V m =10V1&KDQQHO(QKDQFHPHQW0RGH)LHOG‡(IIHFW7UDQVLVWRU Product SummaryVDSI DR DS(ON) @VGS ‡ ‡ GSSGT MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. Excellent gate charge x RDS(on) product(FOM) Very low on-resistance RDS(on) Pb-free lead plating ‡ ‡ ‡ ‡Application DC/DC Converter Ideal for high-frequency switching and synchronous rectification‡ ‡Package Marking and Ordering InformationDevice Marking Device Device Package Reel Size Tape width Quantity Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous (Package Limited) IDDrain Current-Continuous(TC=100℃) ID (100℃Pulsed Drain Current IDMMaximum Power Dissipation PDSingle pulse avalanche energy (Note 5) EAS 480 mJ Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃TO-263-2LG D S50 150 °C operating temperature .